Silicon-Germanium Strained Layers and Heterostructures: Semi-conductor and semi-metals series

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Silicon-Germanium Strained Layers and Heterostructures: Semi-conductor and semi-metals series

By Willander, M.; Jain, Suresh C.

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The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices.

Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.

* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review
* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject
* Appropriate for students and senior researchers

Subject: Trades & Technology -> Industrial Technology -> Materials Science

Silicon-Germanium Strained Layers and Heterostructures: Semi-conductor and semi-metals series
2nd edition
Publisher: Elsevier S & T 10/2003
Imprint: Academic Press
Language: English
Length: 322 pages

ISBN 10: 0127521836
ISBN 13: 9780127521831
Print ISBN: 9780127521831

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