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1. For a uniformly doped n+ +p+n bipolar transistor in thermal equilibrium, (a) sketch the energy–band diagram, (b) sketch the electric field through the device, and (c) repeats parts (a) and (b) for the transistor biased in the forward-active region.

2. A uniformly doped silicon npn bipolar transistor at T = 300 K is biased in the forward–active mode. The doping concentrations are NE = 8 × 10¹⁷ cm¯³,NB = 2 × 10¹⁶cm¯³ and NC = 10¹⁵cm¯³. (c) sketch the minority carrier concentrations through the device and label each curve.

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