2. A uniformly doped silicon npn bipolar transistor at T = 300 K is biased in the forward–active mode. The doping concentrations are NE = 8 × 10¹⁷ cm¯³,NB = 2 × 10¹⁶cm¯³ and NC = 10¹⁵cm¯³. (c) sketch the minority carrier concentrations through the device and label each curve.
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